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High photoresponse detectors based on Yb-doped monolayer WS2 nanosheets 期刊论文
APPLIED SURFACE SCIENCE, 2024, 卷号: 652, 页码: 10
作者:  Liu, Shaoxiang;  Zhao, Yang;  Cao, Sheng;  Chen, Sikai;  Wang, Chunxiang;  Shi, Xuan;  Zhao, Hongquan
收藏  |  浏览/下载：184/0  |  提交时间：2024/04/07
TMDCs  Yb-doped monolayer WS 2 nanosheets  CVD  DFT calculations  Photodetectors  
Supersensitive and Broadband Photodetectors Based on High Concentration of Er3+/Yb3+ Co-doped WS2 Monolayer 期刊论文
ADVANCED OPTICAL MATERIALS, 2023, 页码: 10
作者:  Liu, Shaoxiang;  Zhao, Yang;  Huang, Zuqiang;  Chen, Yin;  Wu, Zepeng;  Liang, Xianxiao;  Liu, Xiu;  Wang, Chunxiang;  Zhao, Hongquan;  Shi, Xuan
收藏  |  浏览/下载：13/0  |  提交时间：2023/12/25
CVD  Er3+/Yb3+ co-doped WS2 monolayer  photodetectors  TMDCs  
Preparation of Mixed Few-Layer GeSe Nanosheets with High Efficiency by the Thermal Sublimation Method 期刊论文
ACS APPLIED MATERIALS & INTERFACES, 2023, 页码: 8
作者:  Wang, Chunxiang;  Shi, Xuan;  Liu, Shaoxiang;  Zhao, Hongquan;  Zhang, Wei
收藏  |  浏览/下载：11/0  |  提交时间：2023/12/25
thermal sublimation  mixed few-layer GeSe  direct bandgap  broadband spectra  GeSe nanosheets  PVD method  
Ultra-Thin GeSe/WS2 Vertical Heterojunction with Excellent Optoelectronic Performances 期刊论文
ADVANCED OPTICAL MATERIALS, 2022, 页码: 7
作者:  Yan, Bing;  Ning, Bo;  Zhang, Guoxin;  Zhou, Dahua;  Shi, Xuan;  Wang, Chunxiang;  Zhao, Hongquan
收藏  |  浏览/下载：53/0  |  提交时间：2022/08/22
2D materials  GeSe  WS  (2)  heterojunctions  optoelectronic properties  photodetectors  
Synthesis and characterization of single-bond fullerene dimer derivatives 期刊论文
JOURNAL OF MATERIALS RESEARCH, 2020, 卷号: 35, 期号: 20, 页码: 2676-2683
作者:  Zhao, Hong-Quan;  Yang, Shihan;  Xu, Tong-Le;  Shi, Xuan;  Lu, Shirong;  Wu, Jian-Wei;  Wang, Chunxiang;  Hu, Jian-Ming
收藏  |  浏览/下载：92/0  |  提交时间：2021/02/24
fullerene dimer derivatives  esters  absorption spectra  fluorescence spectra  photocurrent  
Fast and Broadband Photoresponse of a Few-Layer GeSe Field-Effect Transistor with Direct Band Gaps 期刊论文
ACS APPLIED MATERIALS & INTERFACES, 2019, 卷号: 11, 期号: 41, 页码: 38031-38038
作者:  Zhao, Hongquan;  Yang, Yuhui;  Wang, Chunxiang;  Zhou, Dahua;  Shi, Xuan;  Li, Yuzhi;  Mao, Yuliang
收藏  |  浏览/下载：104/0  |  提交时间：2020/08/24
few-layer GeSe  field-effect transistors  photoresponse time  broadband photoresponse  direct band gaps  ambipolar behavior  
Band Structure and Photoelectric Characterization of GeSe Monolayers 期刊论文
ADVANCED FUNCTIONAL MATERIALS, 2018, 卷号: 28, 期号: 6, 页码: 10
作者:  Zhao, Hongquan;  Mao, Yuliang;  Mao, Xin;  Shi, Xuan;  Xu, Congshen;  Wang, Chunxiang;  Zhang, Shangmin;  Zhou, Dahua
Adobe PDF(8065Kb)  |  收藏  |  浏览/下载：536/0  |  提交时间：2018/06/04
band structures  GeSe monolayers  photoelectric devices  semiconductors