KMS Chongqing Institute of Green and Intelligent Technology, CAS
| Plasma-Enhanced Chemical Vapor Deposition of Two-Dimensional Materials for Applications | |
Yi, Kongyang1,2,3; Liu, Donghua1,2; Chen, Xiaosong1,2; Yang, Jun4 ; Wei, Dapeng1,2 ; Liu, Yunqi4; Wei, Dacheng2,5
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| 2021-02-16 | |
| 摘要 | Since the rise of two-dimensional (2D) materials, synthetic methods including mechanical exfoliation, solution synthesis, and chemical vapor deposition (CVD) have been developed. Mechanical exfoliation prepares randomly shaped materials with small size. Solution synthesis introduces impurities that degrade the performances. CVD is the most successful one for low-cost scalable preparation. However, when it comes to practical applications, disadvantages such as high operating temperature (similar to 1000 degrees C), probable usage of metal catalysts, contamination, defects, and interstices introduced by postgrowth transfer are not negligible. These are the reasons why plasma-enhanced CVD (PECVD), a method that enables catalyst-free in situ preparation at low temperature, is imperatively desirable. In this Account, we summarize our recent progress on controllable preparation of 2D materials by PECVD and their applications. We found that there was a competition between etching and nucleation and deposition in PECVD, making it highly controllable to obtain desired materials. Under different equilibrium states of the competition, various 2D materials with diverse morphologies and properties were prepared including pristine or nitrogen-doped graphene crystals, graphene quantum dots, graphene nanowalls, hexagonal boron nitride (hBN), B-C-N ternary materials (BCxN), etc. We also used mild plasma to modify or treat 2D materials (e.g., WSe2) for desired properties. PECVD has advantages such as low temperature, transfer-free process, and industrial compatibility, which enable facile, scalable, and low-cost preparation of 2D materials with clean surfaces and interfaces directly on noncatalytic substrates. These merits significantly benefit the as-prepared materials in the applications. Field-effect transistors with high motilities were directly fabricated on graphene and nitrogen-doped graphene. By use of h-BN as the dielectric interfacial layer, both mobilities and saturated power densities of the devices were improved owing to the clean, dosely contacted interface and enhanced interfacial thermal dissipation. High-quality materials and interfaces also enabled promising applications of these materials in photodetectors, pressure sensors, biochemical sensors, electronic skins, Raman enhancement, etc. To demonstrate the commercial applications, several prototypical devices were studied such as distributed pressure sensor arrays, touching module on a robot hand for braille recognition, and smart gloves for recording sign language. Finally, we discuss opportunities and challenges of PECVD as a comprehensive preparation methodology of 2D materials for future applications beyond traditional CVD. |
| DOI | 10.1021/acs.accounts.0c00757 |
| 发表期刊 | ACCOUNTS OF CHEMICAL RESEARCH
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| ISSN | 0001-4842 |
| 卷号 | 54期号:4页码:1011-1022 |
| 通讯作者 | Wei, Dapeng(dpwei@cigit.ac.cn) ; Liu, Yunqi(liuyq@iccas.ac.cn) ; Wei, Dacheng(weidc@fudan.edu.cn) |
| 收录类别 | SCI |
| WOS记录号 | WOS:000620925900024 |
| 语种 | 英语 |
