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中国科学院重庆绿色智能技术研究院机构知识库
KMS Chongqing Institute of Green and Intelligent Technology, CAS
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Source Publication:JOURNAL OF ELECTRONIC MATERIALS
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High-Temperature Thermoelectric Properties of Ge-Substituted p-Type Nd-Filled Skutterudites
期刊论文
JOURNAL OF ELECTRONIC MATERIALS, 2017, 卷号: 46, 期号: 5, 页码: 2958-2963
Authors:
Shaheen, Nusrat
;
Shen, Xingchen
;
Javed, Muhammad Sufyan
;
Zhan, Heng
;
Guo, Lijie
;
Alsharafi, Rashed
;
Huang, Tianyu
;
Lu, Xu
;
Wang, Guoyu
;
Zhou, Xiaoyuan
Adobe PDF(1105Kb)
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View/Download:148/0
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Submit date:2018/03/05
p-Type skutterudites
Ge doping
Nd filler
thermoelectric properties
Se Vacancy Effect on the Thermoelectric Performance of Pb-Doped In4Pb0.01Se3-x Polycrystalline
期刊论文
JOURNAL OF ELECTRONIC MATERIALS, 2017, 卷号: 46, 期号: 5, 页码: 3131-3136
Authors:
Alsharafi, Rashed
;
Zhan, Heng
;
Shaheen, Nusrat
;
Lu, Xu
;
Wang, Guoyu
;
Sun, Xiaonan
;
Zhou, Xiaoyuan
Adobe PDF(1283Kb)
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Submit date:2018/03/05
Indium selenide
Se vacancy
layered structure
low thermal conductivity
Thermoelectric Properties of Ce/Pb Co-doped Polycrystalline In4-x Ce (x) Pb0.01Se3 Compounds
期刊论文
JOURNAL OF ELECTRONIC MATERIALS, 2017, 卷号: 46, 期号: 5, 页码: 3215-3220
Authors:
Zhan, Heng
;
Peng, Kunling
;
Alsharafi, Rashed
;
Chen, Qiufan
;
Yao, Wei
;
Lu, Xu
;
Wang, Guoyu
;
Sun, Xiaonan
;
Zhou, Xiaoyuan
Adobe PDF(1607Kb)
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Submit date:2018/03/05
Heavy atom
In4Se3
low thermal conductivity
electron donor