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	Bandgap modulation of MoS2 monolayer by thermal annealing and quick cooling
	Zhao, Hong-Quan1; Mao, Xin2; Zhou, Dahua1; Feng, Shuanglong1; Shi, Xuan1; Ma, Yong1; Wei, Xingzhan1; Mao, Yuliang2
	2016
摘要	We developed a non-mechanical straining method to simultaneously modulate the bandgap and photoluminescence (PL) quantum efficiency of a synthesized molybdenum disulfide (MoS2) monolayer on SiO2, by vacuum annealing and subsequent quick cooling in ethanol. Influences of the thermal treatments at different temperatures from 100 degrees C to 600 degrees C on the PL and Raman spectra of the MoS2 monolayers are reported. A maximum PL peak intensity, twice that of the untreated counterparts under the same measurement conditions, was observed at the treating temperature of 200 degrees C. At the same time, approximately permanent tensile strains were induced, due to the quick cooling from high temperatures, which led to a red-shift of the direct optical bandgap. Modulation of the bandgap was achieved by changing the treating temperatures; nearly linear PL and Raman frequency shifts of similar to 3.82 meV per 100 degrees C and similar to-0.28 cm(-1)/100 degrees C for A exciton photoluminescence and Raman E-2g(1) mode frequency were observed, respectively. The proposed thermal modulation promises a wide range of applications in functional 2D nanodevices and semiconductors. To our knowledge, our findings constitute the first demonstration of thermal engineering by combinational manipulation of annealing and quick cooling of the 2D transitionmetal dichalcogenides.
DOI	10.1039/c6nr05638e
发表期刊	NANOSCALE
ISSN	2040-3364
卷号	8期号:45页码:18995-19003
通讯作者	Zhao, HQ ; Zhou, DH ; Feng, SL (reprint author), Chinese Acad Sci, Chongqing Inst Green & Intelligent Technol, Beijing, Peoples R China. ; Mao, YL (reprint author), Xiangtan Univ, Sch Phys & Optoelect Engn, Hunan Key Lab Micronano Energy Mat & Devices, Xiangtan 411105, Hunan, Peoples R China.
收录类别	SCI
WOS记录号	WOS:000387859800022
语种	英语