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	Sintering temperature dependence of thermoelectric performance in CuCrSe2 prepared via mechanical alloying
	Yan, Yanci1; Guo, Lijie1; Zhang, Zhi3; Lu, Xu1; Peng, Kunling1,2; Yao, Wei1; Dai, Jiyan3; Wang, Guoyu2; Zhou, Xiaoyuan1
	2017-01-15
摘要	CuCrSe2 compounds were synthesized by mechanical alloying followed by annealing and spark plasma sintering at temperatures of 873 K, 923 K, 973 K and 1023 K. Our investigation revealed that high SPS temperature (above 973 K) is the key to obtaining CuCrSe2 single phase completely free of a metallic secondary phase CuCr2Se4. The ultralow thermal conductivity caused by the Cu ions disorder, complex layered structure and dislocation leads to the favorable thermoelectric performance in CuCrSe2 compound. A maximum ZT value over 0.75@873 K is achieved in the absolutely pure sample sintered at 1023 K. (C) 2016 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.
关键词	CuCrSe2 Single phase Layered structure PLEC
DOI	10.1016/j.scriptamat.2016.09.016
发表期刊	SCRIPTA MATERIALIA
ISSN	1359-6462
卷号	127页码:127-131
通讯作者	Zhou, XY (reprint author), Chongqing Univ, Coll Phys, Chongqing 401331, Peoples R China.
收录类别	SCI
WOS记录号	WOS:000386407100029
语种	英语