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Asymmetric metal-semiconductor-metal cavities enhanced broadband mid-infrared detectors
Zhu, Peng1,2; Xiao, Lei1,2; Xiong, Wen1,2; Sun, Tai1,2,3
2023-03-01
摘要Plasmonic infrared detectors have promising applications while they are suffering from narrow response spec-trum and large dark current. We propose a type of mid-infrared detector with broadband enhancement effect based on asymmetric metal-semiconductor-metal cavities. The type II superlattice (T2SL) and silicon are employed as the semiconductor layer for the demonstrations of simulations and experiments. The detectors can effectively couple different waveguide modes in a broadband wavelength range, achieving an average total absorption of more than 80% in the mid-infrared range from 3 mu m to 5.5 mu m. We attribute the effective expansion of the absorption spectrum of the detector to the simultaneous excitation of the spoof surface plasmon and the localized plasmon modes in the spectral range. The specific relationship between the structural parameters of the device and the resonance wavelength is further described quantitatively. The influence of structural parameters such as incident light angle, grating width and absorption layer thickness on the performance of the detector are analyzed. The plasmonic T2SL detector structure can greatly reduce the thickness of absorption layer and achieve a deep subwavelength (1/20 lambda), broadband spectral response with high absorption simultaneously, which can provide a new method for improving the performance of traditional T2SL mid-wave infrared detectors and enhance their competitiveness.
关键词Asymmetric metal-semiconductor-metal cav-ities Localized plasmon Type II superlattice Broadband absorption
DOI10.1016/j.physe.2022.115592
发表期刊PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES
ISSN1386-9477
卷号147页码:7
通讯作者Sun, Tai(suntai@cigit.ac.cn)
收录类别SCI
WOS记录号WOS:000903904000002
语种英语