KMS Chongqing Institute of Green and Intelligent Technology, CAS
| Above-room Curie temperature and barrier-layer-dependent tunneling magnetoresistance in 1T-CrO2 monolayer based magnetic tunnel junctions | |
Liu, Jie1; Tang, Huan1; Gan, Min1; Chen, Hong1; Shi, Xuan2,3  ; Yuan, Hongkuan1,4
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| 2022-08-12 | |
| 摘要 | van der Waals (vdW) heterostructures based on two-dimensional (2D) ferromagnetic materials hold great potential applications in spintronics. Using the density functional theory (DFT) method and first-principles quantum transport simulation, we studied the structures, magnetic properties and spin-resolved transport of 1T-CrO2 monolayer (ML) based vdW magnetic tunnel junctions (MTJs). Owing to a high Curie temperature (T-C) of 392 K and a moderate magnetic anisotropy energy (MAE) of 94 mu eV of the ferromagnetic 1T-CrO2 monolayer, Cu(111)|CrO2|nML-Gr|CrO2|Cu(111) MTJs were built. Our results reveal that their tunneling magnetoresistance (TMR) ratios are dependent on the number of Gr barrier layers within a working bias voltage of 1 V. For the thin barrier layers (n = 1-2), the maintained TMR ratios can reach a giant value of about 1 x 10(4)%, while there appears a decreasing trend with the increasing bias voltage for thick Gr layers (n = 3-5). The barrier-layer-dependent phenomenon is attributed to the decreasing transmission magnitude with increasing bias voltage in a parallel configuration (PC), which is as small as that in an anti-parallel configuration (APC) eventually. Our results would provide some guidance for future experimental fabrications of these 2D materials based MTJs. |
| DOI | 10.1039/d2cp01924h |
| 发表期刊 | PHYSICAL CHEMISTRY CHEMICAL PHYSICS
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| ISSN | 1463-9076 |
| 页码 | 9 |
| 通讯作者 | Shi, Xuan(shixuan@cigit.ac.cn) ; Yuan, Hongkuan(yhk10@swu.edu.cn) |
| 收录类别 | SCI |
| WOS记录号 | WOS:000850529400001 |
| 语种 | 英语 |
