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The High Photoresponse of Stress-Tuned MoTe2 Optoelectronic Devices in the Telecommunication Band
Ye, Guangping1; Xiong, Wen2; Xie, Yiqun3; Gong, Lele1
2022-08-19
摘要There are attractive prospects to achieve large photocurrent and high optical response in telecommunication wavelengths for optoelectronic devices. Inspired by the recent experiment [Nat. Photonics 2020, 14, 578], the photocurrent of the devices composed of noncentral inversion symmetric monolayer MoTe2 along the armchair direction under different linearly polarized light by the quantum transport calculation is investigated. The results demonstrate that the maximum photocurrent will increase under the biaxial tensile stress, and importantly, the peak of photocurrent will move toward the direction of lower photon energy owing to the reduction of the bandgap of monolayer MoTe2, which is opposite to the case of applying the bias voltage. Ultimately, it is proved that monolayer MoTe2 devices with large photoresponse can be tuned to the interesting telecommunication band via the imposition of biaxial stress and bias voltage, which makes the devices have potential applications in the field of silicon photonics.
关键词biaxial stress monolayer MoTe2 photocurrent photogalvanic effect telecommunication bands
DOI10.1002/pssr.202200276
发表期刊PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS
ISSN1862-6254
页码6
通讯作者Xiong, Wen(xiongwen@cigit.ac.cn) ; Xie, Yiqun(yqxie@shnu.edu.cn)
收录类别SCI
WOS记录号WOS:000842332300001
语种英语