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Highly (100)-orientated SnSe thin films deposited by pulsed-laser deposition
Gong, Xiangnan1; Feng, Menglei2; Wu, Hong2; Zhou, Hongpeng2; Suen, Chunhung3; Zou, Hanjun1; Guo, Lijie2; Zhou, Kai1; Chen, Shijian2; Dai, Jiyan3
2021
摘要This work aims at improving the quality of the highly (100)-orientated SnSe thin films for thermoelectric applications. The as-deposited films were obtained by controlling the basic parameters including target-to-substrate distance, deposition time and growth temperature through pulsed-laser deposition. The films quality was further improved by vacuum thermal annealing. The microstructure and crystalline structure of the films were studied by X-ray photoelectron spectroscopy, X-ray diffraction, electron probe micro-analyzer, electron back-scatter diffraction, atomic force microscope and Raman spectroscopy. The SnSe thin films grown on SiO2/Si substrate at 673 K followed by thermal annealing at 673 K for 30 min show the best crystal quality and uniform orientation with mirror-like surface, and the corresponding Seebeck coefficient and power factor are about 383 mu V/K and 15.4 mu W/m.K-2, respectively. Angle resolved polarized Raman spectroscopy proved that the surface of the SnSe films is the b-c plane with preferred (1 0 0) orientation crystalline over a large area, providing an important way to prepare thermoelectric thin film devices by pulse laser deposition.
关键词SnSe Thin films Pulsed laser deposition Thermal annealing Angle-resolved polarized Raman spectra
DOI10.1016/j.apsusc.2020.147694
发表期刊APPLIED SURFACE SCIENCE
ISSN0169-4332
卷号535页码:8
通讯作者Dai, Jiyan(jiyan.dai@polyu.edu.hk) ; Wang, Guoyu(guoyuw@cigit.ac.cn) ; Zhou, Xiaoyuan(xiaoyuan2013@cqu.edu.cn)
收录类别SCI
WOS记录号WOS:000582373900047
语种英语